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	Engineering of Fermi level by nin diamond junction for control of charge states of NV centers.
	Mizuochi,N.; Makino,T.; Murai,T.; Hatano,M.; Fujiwara,M.; Kato,H.; Herbschleb,E.D.; Murooka,T.; Shimizu,M.; Morishita,H.
刊名	Applied Physics Letters
	2018
卷号	Vol.112 No.11页码:1
关键词	FERMI level *FERMI energy *ELECTRONIC structure *NITROGEN *QUANTUM information science
ISSN号	0003-6951
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5349119
专题	上海电子信息职业技术学院
作者单位	1., Tsukuba, Ibaraki 305-8568, Japan 3 Department of Physics, Tokyo University of Science, Shinjuku, Tokyo 162-8601, Japan 4 Department of Physical Electronics, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan 5 Institute for Chemical Research, Kyoto University, Uji, Kyoto 610-0011, Japan 2.AIST 3.1 Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan 2 National Institute of Advanced Industrial Science and Technology
推荐引用方式 GB/T 7714	Mizuochi,N.,Makino,T.,Murai,T.,et al. Engineering of Fermi level by nin diamond junction for control of charge states of NV centers.[J]. Applied Physics Letters,2018,Vol.112 No.11:1.
APA	Mizuochi,N..,Makino,T..,Murai,T..,Hatano,M..,Fujiwara,M..,...&Doi,Y..(2018).Engineering of Fermi level by nin diamond junction for control of charge states of NV centers..Applied Physics Letters,Vol.112 No.11,1.
MLA	Mizuochi,N.,et al."Engineering of Fermi level by nin diamond junction for control of charge states of NV centers.".Applied Physics Letters Vol.112 No.11(2018):1.

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