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	半導体光集積回路の製造方法
	平田 隆昭
	1994-05-11
著作权人	HIKARI KEISOKU GIJIYUTSU KAIHATSU KK
专利号	JP1994036460B2
国家	日本
文献子类	授权发明
其他题名	半導体光集積回路の製造方法
英文摘要	PURPOSE:To integrate an optical element having various band gaps on the same substrate without complicating the crystal growing process by controlling the gap according to the degree of disordering of a quantum well structure. CONSTITUTION:A semiconductor optical element is used as a light emitting region 21 in a quantum well structure which is 'not disordered, a waveguide 22 is formed in a waveguide region, a phase regulating region 23, a DBR region 24 and a PM modulated region 25 are formed in a refractive index control region, and an AM modulated region 26 is formed in an absorption control region. The control region is increased in its band gap by disordering, and the absorption edge is shifted slightly to a short wavelength side from an oscillation wavelength correspondingly. Thus, the edge corresponding to the gap is shifted to a short wavelength side from the oscillation wavelength of the region 2 Accordingly, it becomes transparent in a steady state. However, when a current or a voltage is applied to the region, the edge is shifted to the long wavelength side, and its absorption coefficient is varied. The region can be used as the region 26 by using variation in the coefficient.
公开日期	1994-05-11
申请日期	1989-12-11
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42403]
专题	半导体激光器专利数据库
作者单位	HIKARI KEISOKU GIJIYUTSU KAIHATSU KK
推荐引用方式 GB/T 7714	平田 隆昭. 半導体光集積回路の製造方法. JP1994036460B2. 1994-05-11.

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