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	Semiconductor laser diode device and method of fabrication thereof
	KITAMURA, SHOTARO
	2013-07-02
著作权人	RENESAS ELECTRONICS CORPORATION
专利号	US8477819
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser diode device and method of fabrication thereof
英文摘要	Disclosed is a distributed feedback semiconductor laser diode device capable of operating at a high output ratio of forward/backward optical power while ensuring satisfactory stability of single-mode oscillation. The distributed feedback semiconductor laser diode device is configured to include a diffraction grating formed in an optical waveguide thereof. In a partial region of the optical waveguide, there is formed an alternately repetitive pattern of a grating part possessing a distributive refractivity characteristic and a no-grating space part possessing a uniform refractivity characteristic. The no-grating space part possessing a uniform refractivity characteristic has an optical path length that is half an integral multiple of a wavelength of laser oscillation, and the grating part possessing a distributive refractivity characteristic includes at least five grating periods.
公开日期	2013-07-02
申请日期	2010-11-22
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42349]
专题	半导体激光器专利数据库
作者单位	RENESAS ELECTRONICS CORPORATION
推荐引用方式 GB/T 7714	KITAMURA, SHOTARO. Semiconductor laser diode device and method of fabrication thereof. US8477819. 2013-07-02.

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