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	Integrated semiconductor laser and waveguide device
	BERRY, GRAHAM MICHAEL; BOOIJ, WILFRED; SILVER, MARK
	2005-08-30
著作权人	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
专利号	US6937632
国家	美国
文献子类	授权发明
其他题名	Integrated semiconductor laser and waveguide device
英文摘要	A buried heterojunction laser optically coupled with a buried waveguide electro-absorption (EA) optical modulator via an active layer is fabricated on a substrate carrying a number of deposited semiconductor layers. The laser component includes a laser current conduction region and an adjacent laser current confinement region. The waveguide component includes a waveguide current confinement region comprising first and second current blocking structures formed from different grown semiconductor layers. An extension of the first current blocking structure is interposed between the second current blocking structure and the waveguide current conduction region. Because each of the components is flanked by current confinement regions of differing structures, the resistive and capacitative properties of the current confinement regions can be selected to optimise the performance of that component for a particular use.
公开日期	2005-08-30
申请日期	2003-06-12
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42339]
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
推荐引用方式 GB/T 7714	BERRY, GRAHAM MICHAEL,BOOIJ, WILFRED,SILVER, MARK. Integrated semiconductor laser and waveguide device. US6937632. 2005-08-30.

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