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	Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same
	SHIM, JONG-IN; KITAMURA, MITSUHIRO
	1995-09-12
著作权人	NEC CORPORATION
专利号	US5450437
国家	美国
文献子类	授权发明
其他题名	Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same
英文摘要	A distributed feedback semiconductor laser device having a semiconductor substrate, a bottom electrode formed on a bottom surface of the substrate, a corrugation-shaped grating formed on a top surface of the substrate, an active waveguide layer whose energy band gap profile and whose light propagation constant are varied along a cavity length direction of the laser device, the active waveguide layer being formed over the corrugation-shaped grating, a clad layer formed to cover the active waveguide layer, and a top electrode formed on a top of the clad layer. The active waveguide layer is grown by a selective metal organic vapor phase epitaxy with use of slender insulation masks having a variation in width, the slender insulation masks being arranged at both sides of an area on which the active waveguide layer is grown.
公开日期	1995-09-12
申请日期	1993-12-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42256]
专题	半导体激光器专利数据库
作者单位	NEC CORPORATION
推荐引用方式 GB/T 7714	SHIM, JONG-IN,KITAMURA, MITSUHIRO. Multiple quantum well distributed feedback semiconductor laser device and method for fabricating the same. US5450437. 1995-09-12.

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