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	Passivated semiconductor surfaces
	CHIN, ALAND K.; CHOW, PETER
	2013-02-05
著作权人	SCIENCE RESEARCH LABORATORY, INC.
专利号	US8369371
国家	美国
文献子类	授权发明
其他题名	Passivated semiconductor surfaces
英文摘要	The method of these teachings includes processing a semiconductor structure forming an active waveguide of a semiconductor laser in an environment free of contamination in order to provide contamination free mirror facets at the ends of the active waveguide, and depositing a single crystal passivation layer comprised of a semiconductor whose bandgap exceeds that of the active layer and the waveguide layers and that does not form misfit dislocations with the laser diode semiconductor, the deposition occurring at a temperature at which the semiconductor structure does not degrade.
公开日期	2013-02-05
申请日期	2011-10-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/42187]
专题	半导体激光器专利数据库
作者单位	SCIENCE RESEARCH LABORATORY, INC.
推荐引用方式 GB/T 7714	CHIN, ALAND K.,CHOW, PETER. Passivated semiconductor surfaces. US8369371. 2013-02-05.

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