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	Bandgap tuning of semiconductor quantum well structures
	ELMAN, BORIS S.; KOTELES, EMIL S.; MELMAN, PAUL; ARMIENTO, CRAIG A.
	1993-08-24
著作权人	GTE LABORATORIES INCORPORATED
专利号	US5238868
国家	美国
文献子类	授权发明
其他题名	Bandgap tuning of semiconductor quantum well structures
英文摘要	A method of selectively tuning the bandedge of a semi-conductor heterostructure includes forming a disordered region which is spatially separated from a quantum well active region, and subsequently annealing the heterostructure so that vacancies/defects in the disordered region diffuse into the quantum well region and enhance interdiffusion at the well-barrier heterojunctions. The tuning is spatially selective when the heterostructure is masked so that exposed portions correspond to regions where bandgap tuning is desirable. The heterostructures of interest are III-V material systems, such as AlGaAs/GaAs, where the active region includes structures such as a single quantum well, a multiple quantum well, or a superlattice.
公开日期	1993-08-24
申请日期	1991-07-01
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41971]
专题	半导体激光器专利数据库
作者单位	GTE LABORATORIES INCORPORATED
推荐引用方式 GB/T 7714	ELMAN, BORIS S.,KOTELES, EMIL S.,MELMAN, PAUL,et al. Bandgap tuning of semiconductor quantum well structures. US5238868. 1993-08-24.

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