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	Long wavelength DH, SCH and MQW lasers based on Sb
	RAZEGHI, MANIJEH
	2000-08-22
著作权人	MANIJEH RAZEGHI
专利号	US6108360
国家	美国
文献子类	授权发明
其他题名	Long wavelength DH, SCH and MQW lasers based on Sb
英文摘要	InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 mu m to 5 mu m is possible by varying the ratio of As:Sb in the active layer. Further, the active layer of a DH structure can be doped with a p-type dopant, so that the dopant level of the active layer is at least one magnitude less than the dopant level of either confinement layer and the n-p junction is within the active layer and a higher power level and better efficiency is observed. A perfect lattice matching of the InAsSb contact layers and InAsSbP confinement layer of a DH structure is found to minimize the dislocation density at the InAsSb/InAsSbP interface. Decreasing the band-offset between the active layer and the confinement layers increases the brightness of the laser. A SCH laser of the subject invention can obtain a minimum discontinuity of conduction band between the confinement layers and the waveguide by adjusting the thickness of the waveguide and the number of quantum wells. The wavelength of the emitted light can be controlled, over the range of 3 mu m to 5 mu m by changing the material composition of the active layer, by changing the thickness of the quantum well, or by changing both parameters.
公开日期	2000-08-22
申请日期	1997-06-06
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41918]
专题	半导体激光器专利数据库
作者单位	MANIJEH RAZEGHI
推荐引用方式 GB/T 7714	RAZEGHI, MANIJEH. Long wavelength DH, SCH and MQW lasers based on Sb. US6108360. 2000-08-22.

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