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	Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor
	JOHNSON, FREDERICK G.; KOLEY, BIKASH; WASICZKO, LINDA M.
	2002-06-18
著作权人	NATIONAL SECURITY AGENCY
专利号	US6407407
国家	美国
文献子类	授权发明
其他题名	Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor
英文摘要	A ridge laser that includes a Group III-V semiconductor material substrate; a first selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a multiple quantum well active region; a second selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material; a Group III-V semiconductor material cap layer; and a contact material. Each at least one strain-compensated superlattice includes at least two monolayers of a Group III-V semiconductor material and at least two monolayers of an aluminum-bearing Group III-V semiconductor material. In the preferred embodiment, the substrate is InP of any type; each selectively oxidized at least one strain-compensated superlattice of Group III-V semiconductor material is InAs/AlAs, where each at least one superlattice of InAs/AlAs includes at least two monolayers of InAs and at least two monolayers of AlAs; the multiple quantum well active region is InGaAsP lattice matched to the InP substrate, the Group III-V semiconductor material cap layer is InP, and the contact material is gold.
公开日期	2002-06-18
申请日期	2000-05-02
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41893]
专题	半导体激光器专利数据库
作者单位	NATIONAL SECURITY AGENCY
推荐引用方式 GB/T 7714	JOHNSON, FREDERICK G.,KOLEY, BIKASH,WASICZKO, LINDA M.. Ridge laser with oxidized strain-compensated superlattice of group III-V semiconductor. US6407407. 2002-06-18.

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