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	Deposition technique
	COX HERBERT MICHAEL
	1988-12-01
著作权人	AMERICAN TELEPHONE AND TELEGRAPH COMPANY
专利号	DE3565865D1
国家	德国
文献子类	授权发明
其他题名	Deposition technique
英文摘要	Process for forming devices, such as photodiodes based on III-V semiconductor materials, utilizing a CVD epitaxial procedure. This procedure includes, for example, forming at least one precursor gas flow, subjecting a substrate (55) to said flow to deposit a material, and completing the device. At least one of said precursor gas flows is formed from at least one liquid source gas flow and at least one solid source gas flow. Said at least one solid source gas flow is formed by subjecting a heated solid (e.g., 32 ,33) to a chlorine entity-containing gas flow, and said at least one liquid source gas flow is formed by subjecting a liquid to a chlorine entity-containing gas flow.
公开日期	1988-12-01
申请日期	1985-01-30
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41892]
专题	半导体激光器专利数据库
作者单位	AMERICAN TELEPHONE AND TELEGRAPH COMPANY
推荐引用方式 GB/T 7714	COX HERBERT MICHAEL. Deposition technique. DE3565865D1. 1988-12-01.

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