| Broad area laser including anti-guiding regions for higher-order lateral mode suppression | |
| TELKKALA, JARKKO; MULLER, JURGEN; LICHTENSTEIN, NORBERT | |
| 2017-10-24 | |
| 著作权人 | II-VI LASER ENTERPRISE GMBH |
| 专利号 | US9800020 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Broad area laser including anti-guiding regions for higher-order lateral mode suppression |
| 英文摘要 | A broad area laser diode is configured to include an anti-guiding layer located outside of the active region of the device. The anti-guiding layer is formed of a high refractive index material that serves to de-couple unwanted, higher-order lateral modes (attributed to thermal lensing problems) from the lower-order mode output beam of output signal from the laser diode. The anti-guiding layer is formed using a single epitaxial growth step either prior to or subsequent to the steps used to grow the epitaxial layers forming the laser diode itself, thus creating a structure that provides suppression of unwanted higher-order modes without requiring a modification of specific process steps used to fabricate the laser diode itself. |
| 公开日期 | 2017-10-24 |
| 申请日期 | 2016-06-09 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/41821]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | II-VI LASER ENTERPRISE GMBH |
| 推荐引用方式 GB/T 7714 | TELKKALA, JARKKO,MULLER, JURGEN,LICHTENSTEIN, NORBERT. Broad area laser including anti-guiding regions for higher-order lateral mode suppression. US9800020. 2017-10-24. |
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