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	Nanometer-scale silicon-on-insulator photonic componets
	SOREF, RICHARD A.
	1998-11-17
著作权人	AIR FORCE, UNITED STATES
专利号	US5838870
国家	美国
文献子类	授权发明
其他题名	Nanometer-scale silicon-on-insulator photonic componets
英文摘要	Nanometer scale silicon-on-insulator (SOI) guided-wave optical components in the near infra-red employ an SOI platform for optical isolation, and single mode silicon strip etched into the buried oxide. A multi-layer core for the strip consistes of several 1-3 nanometer crystal silicon multiple quantum wells confined by wide bandgap epitaxial barriers. The MQW region of the strip employs intersubband or band-to-band photonic effects. Active strip microcavities use a photonic bandgap resonator of etched air cylinders, or two sets of etched slot Bragg grating reflectors. Many thousands of these components can be integrated on a Si chip.
公开日期	1998-11-17
申请日期	1997-02-28
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41796]
专题	半导体激光器专利数据库
作者单位	AIR FORCE, UNITED STATES
推荐引用方式 GB/T 7714	SOREF, RICHARD A.. Nanometer-scale silicon-on-insulator photonic componets. US5838870. 1998-11-17.

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