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	Quantum box or quantum wire semiconductor structure and methods of producing same
	ARIMOTO, HIROSHI
	1994-05-17
著作权人	FUJITSU LIMITED
专利号	US5313484
国家	美国
文献子类	授权发明
其他题名	Quantum box or quantum wire semiconductor structure and methods of producing same
英文摘要	A quantum box semiconductor structure in which truncated triangular, or quadrilateral, pyramid base portions are formed on the main surface of a silicon semiconductor substrate defined, selectively, by a (111) B or a (100) plane; the triangular, or quadrilateral, truncated pyramid base portions have corresponding three, or four, (111) A plane sides, respectively. Corresponding triangular, or quadrilateral, quantum boxes of a second semiconductor material having a narrower energy band gap and larger electron affinity than the first, silicon semiconductor material of the base portions are formed on the corresponding triangular, or quadrilateral, top surfaces of the base portions and each has three, or four, corresponding (111) A plane sides. The quantum box lasers are formed in a succession of process steps including epitaxial growth or, alternatively, alternate epitaxial growth and etching steps. An alternative structure includes stripe-like quantum boxes of triangular cross-section. Further, the quantum boxes may be truncated and further triangular, or quadrilateral, prisms may be formed on the corresponding top surfaces of the respective boxes. A further embodiment employs truncated base portions of triangular prism cross-section and quantum wires of triangular cross-section formed thereon. Covering, clad and electrode interconnection layers are formed on the resulting structures and the main surface of the substrate, with respective electrodes being formed on the electrode interconnection layer and the bottom main surface of the substrate.
公开日期	1994-05-17
申请日期	1992-06-15
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41743]
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	ARIMOTO, HIROSHI. Quantum box or quantum wire semiconductor structure and methods of producing same. US5313484. 1994-05-17.

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