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	Semiconductor laser device and method for fabricating thereof
	HOSHI, NOZOMU; NAGASAKI, HIROKI
	2005-07-19
著作权人	SONY CORPORATION
专利号	US6920167
国家	美国
文献子类	授权发明
其他题名	Semiconductor laser device and method for fabricating thereof
英文摘要	A semiconductor laser device has on a compound semiconductor substrate at least a lower cladding layer, an active layer, an upper cladding layer and a contact layer. An upper part of the upper cladding layer and the contact layer are formed as a mesa-structured portion having a ridge stripe pattern, and the both sides of the mesa structured portion are buried with a current blocking layer. The laser device includes the current blocking layer having a pit-like recess penetrating thereof and extending towards the compound semiconductor substrate, and a portion of the recess other than that penetrating the current blocking layer being covered or buried with an insulating film or a compound semiconductor layer with a high resistivity. The compound semiconductor substrate and the electrode layer thus can be kept insulated in an area other than a current injection area, thereby non-emissive failure due to short-circuit is prevented.
公开日期	2005-07-19
申请日期	2003-09-18
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41682]
专题	半导体激光器专利数据库
作者单位	SONY CORPORATION
推荐引用方式 GB/T 7714	HOSHI, NOZOMU,NAGASAKI, HIROKI. Semiconductor laser device and method for fabricating thereof. US6920167. 2005-07-19.

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