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	光集積型波長可変半導体レーザ装置
	尾内 敏彦; 坂田 肇
	2000-05-26
著作权人	キヤノン株式会社
专利号	JP3072123B2
国家	日本
文献子类	授权发明
其他题名	光集積型波長可変半導体レーザ装置
英文摘要	PURPOSE:To enable frequency control, making variable the wavelength of semiconductor oscillation light by feed-controlling a frequency fluctuation signal of laser light from a frequency reference device into a semiconductor laser. CONSTITUTION:This device is driven by a constant power source 9 which injects current into an active region 17 having a grating by way of a bias T14. A phase control region 16 having no grating drives with a constant power source 18. The control of this injection current makes it possible to change the oscillation wavelength of a laser A distribution reflector 3 drives with a constant power source 10. The injection current into this distribution reflector is arranged to detect the frequency fluctuation of laser light by changing the central wavelength and oscillating with change in the oscillation wavelength of the laser 1 (This must be carried out by changing the central current into the phase control region 16). A differential signal of a light receiver 5 detects the frequency fluctuation of the laser The light detected with the light receiver 4 monitors the oscillation wavelength of the laser 1, combining the drive current of the distribution reflector 3 with the detection signal of the light receiver 4. On the other hand, a signal of a light receiver 6 detects power fluctuations in the laser light.
公开日期	2000-07-31
申请日期	1990-11-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/41658]
专题	半导体激光器专利数据库
作者单位	キヤノン株式会社
推荐引用方式 GB/T 7714	尾内 敏彦,坂田 肇. 光集積型波長可変半導体レーザ装置. JP3072123B2. 2000-05-26.

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