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	Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry
	BAEK, JONG HYEOB; LEE, BUN
	2002-06-25
著作权人	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
专利号	US6410347
国家	美国
文献子类	授权发明
其他题名	Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry
英文摘要	The method of manufacturing VCSEL composed of multiple material layers uses a main measuring laser having same wavelength of that of VCSEL so as to estimate the growth periods required for growing a predetermined thickness of the material layers by analyzing the reflected signal of the main measuring laser and then control the growth time durations of subsequent material layers. This method eliminates the need of pre-knowledge of refractive indexes and the growing speeds of the material layers. Also, an interruptive process for measuring thickness, growth speed or refractive indexes can be omitted so as to perform the entire epitaxial growth in-situ and thus improve the reproducibility and the uniformity. In addition, a subsidiary measuring laser may be used other than the main measuring laser for improving the accuracy of the control of growth time duration, where the subsidiary measuring laser has a different wavelength from that of VCSEL. The subsidiary measuring laser may be used especially in the case of fabricating the VCSEL without any buffer layer.
公开日期	2002-06-25
申请日期	1999-09-13
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/40468]
专题	半导体激光器专利数据库
作者单位	ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
推荐引用方式 GB/T 7714	BAEK, JONG HYEOB,LEE, BUN. Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry. US6410347. 2002-06-25.

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