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	Semiconductor light emitting element, and its manufacturing method
	YOSHIDA, HIROAKI; ITAYA, KAZUHIKO; SAITO, SHINJI; NISHIO, JOHJI; NUNOUE, SHINYA
	2001-10-16
著作权人	ALPAD CORPORATION
专利号	US6303405
国家	美国
文献子类	授权发明
其他题名	Semiconductor light emitting element, and its manufacturing method
英文摘要	A semiconductor light emitting element of nitride compound semiconductors excellent in cleavability, heat radiation and resistance to leakage is made by epitaxially grow a nitride compound semiconductor layers on a substrate of sapphire, for example, and thereafter separating the substrate. For separating the substrate, there are a technique using a abruption mechanism susceptible to a stress such as a "lift-off layer" and a recesses on a substrate. A technique using laser light to cause a local dense heat stress at the abruption mechanism is effective. A nitride compound semiconductor obtained by separating the substrate may be used as a new substrate to epitaxially grow high-quality nitride compound semiconductors thereon.
公开日期	2001-10-16
申请日期	1999-09-24
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/40138]
专题	半导体激光器专利数据库
作者单位	ALPAD CORPORATION
推荐引用方式 GB/T 7714	YOSHIDA, HIROAKI,ITAYA, KAZUHIKO,SAITO, SHINJI,et al. Semiconductor light emitting element, and its manufacturing method. US6303405. 2001-10-16.

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