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	Heterojunction devices
	-
	1978-02-01
著作权人	UNIV CONNECTICUT
专利号	GB1499561A
国家	英国
文献子类	授权发明
其他题名	Heterojunction devices
英文摘要	1499561 Semi-conductor devices UNIVERSITY OF CONNECTICUT 16 Jan 1975 [18 Jan 1974] 1903/75 Heading H1K Heterojunction devices.-A semi-conductor device including a heterojunction comprises two crystallographically compatible semi-conductor materials A, B, 72, 71, Fig. 4, having different energy bandgaps such that the bandgap of material A is less than that of material B, and mirror-smooth surfaces, and being joined together at a junction 70 to form a single crystal, the junction 70 having a width over which transition from atoms of material A to atoms of materials B occurs of less than about 2000 , there being substantially no crossdiffusion of dopants or autodoping of the materials across the junction 70, and the material B having an average resistivity less than 5À103 ohm cm. in the direction parallel to the plane of the junction, whereby, in a heterodiode containing the heterojunction, the minority carriers in the material A have a long lifetime and at least one of the following characteristics: (a) sharp current-voltage characteristics, (b) abrupt avalanche breakdown, (c) low junction capacitance. Manufacture.-The heterojunction 70 may be incorporated in a number of stated devices and is formed by epitaxial deposition in an elongate reaction zone 10, Fig. 2, under anhydrous and oxygen-free conditions and in the absence of hydrogen iodide-promoting substances. The zone 10 contains iodine 16 in a source zone 14, a substrate of the material B on a support 18 in a seed zone 20, and germanium 22 in a source zone 21 therebetween. A carrier gas containing hydrogen, an inert gas and a dopant are introduced into the reaction zone 10 and the zones 14, 21, 20 are heated to specified low, high and medium temperatures respectively. Germanium diiodide is produced in the reaction zone 10 and a disproportionation reaction occurs in the seed zone 20 where germanium is epitaxially deposited on the substrate. The pairs of semi-conductor materials include Ge/GaAs, Ge/ZnSe, GaAs/ZnSe, AlAs/GaAs, GaSb/InAs, ZnTe/GaSb, Ge 0À9 Si 0À1 / Ge, CdTe/InSb.
公开日期	1978-02-01
申请日期	1975-01-16
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/40100]
专题	半导体激光器专利数据库
作者单位	UNIV CONNECTICUT
推荐引用方式 GB/T 7714	-. Heterojunction devices. GB1499561A. 1978-02-01.

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