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	Double channel planar buried heterostructure laser
	KITAMURA, MITSUHIRO; MITO, IKUO; KOBAYASHI, KOHROH
	1985-06-25
著作权人	NIPPON ELECTRIC CO., LTD.
专利号	US4525841
国家	美国
文献子类	授权发明
其他题名	Double channel planar buried heterostructure laser
英文摘要	A buried heterostructure semiconductor laser diode with improved efficiency, CW operating temperature and output characteristic is comprised of a semiconductor substrate of a first conductivity type and includes successively at least a first cladding semiconductor layer of the first conductivity type, an active semiconductor layer, and a second cladding semiconductor layer of a second conductivity type. The active semiconductor layer has a narrower bandgap than those of the first and second cladding semiconductor layers. The multilayer double heterostructure has a stripe geometry with channels formed along both sides of the stripe and extending down to the first cladding layer. A current blocking layer is formed on the multilayer double heterostructure except for the top surface of the stripe geometry, in order to block a current flow therethrough.
公开日期	1985-06-25
申请日期	1982-10-18
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39503]
专题	半导体激光器专利数据库
作者单位	NIPPON ELECTRIC CO., LTD.
推荐引用方式 GB/T 7714	KITAMURA, MITSUHIRO,MITO, IKUO,KOBAYASHI, KOHROH. Double channel planar buried heterostructure laser. US4525841. 1985-06-25.

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