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	半導体レ-ザ装置およびその製造方法
	▲吉▼川 昭男; 杉野 隆
	1994-04-27
著作权人	MATSUSHITA DENKI SANGYO KK
专利号	JP1994032327B2
国家	日本
文献子类	授权发明
其他题名	半導体レ-ザ装置およびその製造方法
英文摘要	PURPOSE:To enable a buried stripe structure to be produced in a single crystal growth, by independently forming thin films in which a multiplicity of layers are laminated in the same order as far as to a thin-film layer which is formed directly above an active layer, and then forming a thin film which exhibits the same conductivity as that of the substrate directly above the multi-layer thin films. CONSTITUTION:With a photoresist 16 having a width (d) employed as a mask, an n type GaAs substrate 10 is chemically etched to provide parallel recesses and projections, thereby forming a stripe-shaped inverted mesa projection 10a. After an n type clad layer 11, an undoped active layer 12 and a p type clad layer 13 have been formed, an n type cap layer 14 is formed by crystal growth. After the surface has been washed, a photoresist 17 is applied to the surface, and the substrate 10 is rotated. In consequence, the photoresist 17 becomes thin on the projection and becomes thick on the other portion. When current is injected, the current is constricted from the upper and lower sides by the projection on the n type GaAs substrate 10 and a p type GaAs region 15 formed by diffusion. As a result, it is possible to obtain a semiconductor laser device which goes into single transverse mode oscillation at a threshold current value of 30mA.
公开日期	1994-04-27
申请日期	1984-07-05
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39299]
专题	半导体激光器专利数据库
作者单位	MATSUSHITA DENKI SANGYO KK
推荐引用方式 GB/T 7714	▲吉▼川 昭男,杉野 隆. 半導体レ-ザ装置およびその製造方法. JP1994032327B2. 1994-04-27.

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