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	Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material
	HOLONYAK, JR., NICK
	1982-12-21
著作权人	UNIVERSITY OF ILLINOIS FOUNDATION
专利号	US4365260
国家	美国
文献子类	授权发明
其他题名	Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material
英文摘要	Advantageous operation can be achieved in a semiconductor heterostructure light emitting device by utilizing a single thin active layer which exhibits quantum size effects. It has been found that performance can be degraded by employing a single quantum layer that is thinner than a certain minimum thickness, this minimum thickness being about 100 Angstroms, (the approximate carrier scattering path length). In one form of the invention, there is provided a semiconductor heterostructure device which includes first and second relatively wide bandgap semiconductor regions of opposite conductivity types. A single quantum well active layer is disposed between the first and second regions. The active layer is formed of a relatively narrow bandgap semiconductor having a thickness which is in the range of about 100 to 400 Angstroms, and is preferably about 200 Angstroms. One preferred combination of materials for the device comprises aluminum gallium arsenide for the relatively wide bandgap semiconductor regions, and gallium arsenide for the single active layer. However, other combinations of materials may be suitable, for example: indium phosphide for the relatively wide bandgap regions and indium gallium phosphide arsenide for the single active layer; or indium gallium arsenide phosphide for the relatively wide bandgap regions and gallium arsenide phosphide for the single active layer; or aluminum gallium arsenide phosphide for the confining layer and gallium arsenide phosphide for the active layer. The latter two are particularly useful as emitters in the visible portion of the spectrum. In a further form of the invention, there is disclosed a semiconductor heterostructure device wherein the active region comprises one or more quantum layers of an indirect bandgap semiconductor material, preferably germanium.
公开日期	1982-12-21
申请日期	1980-12-08
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39146]
专题	半导体激光器专利数据库
作者单位	UNIVERSITY OF ILLINOIS FOUNDATION
推荐引用方式 GB/T 7714	HOLONYAK, JR., NICK. Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material. US4365260. 1982-12-21.

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