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	Method of producing a semiconductor laser
	SATO, KIYOTAKA; TOGURA, KENJI
	1994-11-15
著作权人	CLARION CO. LTD.
专利号	US5365537
国家	美国
文献子类	授权发明
其他题名	Method of producing a semiconductor laser
英文摘要	A semiconductor substrate is coated with an insulation mask. A window is cut in the mask using photolithography leaving stress risers at locations defining the length of a laser cavity. A plurality of layers of semiconductor film are selectively grown over the exposed substrate to form a pin diode and necessary impurities are injected. An intrinsic layer of the film forms a laser excitation layer and emits laser beams in response to excitation. Following heat treatment, the device is cooled rapidly, causing stress in the areas where the stress risers from the mask join the semiconductor film. By the time the device reaches room temperature, the semiconductor film is split and separated by cleavage planes. Alignment of the semiconductor laser device output beams is produced by anisotropic etching of the cleavage planes to form 45 DEG mirror planes. Conventional photolithographic techniques permit formation of the laser resonator with an accuracy on the order of submicrons.
公开日期	1994-11-15
申请日期	1993-01-07
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/39110]
专题	半导体激光器专利数据库
作者单位	CLARION CO. LTD.
推荐引用方式 GB/T 7714	SATO, KIYOTAKA,TOGURA, KENJI. Method of producing a semiconductor laser. US5365537. 1994-11-15.

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