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	Epitaxial growth of in-plane nanowires and nanowire devices
	LEE, SEUNG CHANG; BRUECK, STEVEN R. J.
	2014-07-22
著作权人	STC.UNM
专利号	US8785226
国家	美国
文献子类	授权发明
其他题名	Epitaxial growth of in-plane nanowires and nanowire devices
英文摘要	Exemplary embodiments provide semiconductor nanowires and nanowire devices/applications and methods for their formation. In embodiments, in-plane nanowires can be epitaxially grown on a patterned substrate, which are more favorable than vertical ones for device processing and three-dimensional (3D) integrated circuits. In embodiments, the in-plane nanowire can be formed by selective epitaxy utilizing lateral overgrowth and faceting of an epilayer initially grown in a one-dimensional (1D) nanoscale opening. In embodiments, optical, electrical, and thermal connections can be established and controlled between the nanowire, the substrate, and additional electrical or optical components for better device and system performance.
公开日期	2014-07-22
申请日期	2013-09-20
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38636]
专题	半导体激光器专利数据库
作者单位	STC.UNM
推荐引用方式 GB/T 7714	LEE, SEUNG CHANG,BRUECK, STEVEN R. J.. Epitaxial growth of in-plane nanowires and nanowire devices. US8785226. 2014-07-22.

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