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	Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same
	SONG, JUNE O
	2013-03-26
著作权人	SAMSUNG DISPLAY CO., LTD.
专利号	US8404505
国家	美国
文献子类	授权发明
其他题名	Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same
英文摘要	A light-emitting device is provided with a substrate decomposition prevention layer using as a matrix at least one selected from the group consisting of boron nitride (B—N), silicon carbide (Si—C), and silicon carbon nitride (Si—C—N), and patterned into a predetermined shape; an n-type nitride clad layer formed on the substrate decomposition prevention layer; a nitride active layer formed on the n-type nitride clad layer; a p-type nitride clad layer formed on the nitride active layer; a p-type ohmic contact layer formed on the p-type nitride clad layer; a p-type electrode pad formed on the p-type ohmic contact layer; an n-type ohmic contact layer electrically connected to the n-type nitride clad layer by means of a patterned region of the substrate decomposition prevention layer; and an n-type electrode pad formed beneath the n-type ohmic contact layer.
公开日期	2013-03-26
申请日期	2012-01-06
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38592]
专题	半导体激光器专利数据库
作者单位	SAMSUNG DISPLAY CO., LTD.
推荐引用方式 GB/T 7714	SONG, JUNE O. Nitride light emitting device of using substrate decomposition prevention layer and manufacturing method of the same. US8404505. 2013-03-26.

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