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	Dual sided processing and devices based on freestanding nitride and zinc oxide films
	ZIMMERMAN, SCOTT M.; BEESON, KARL W.; LIVESAY, WILLIAM R.
	2012-10-30
著作权人	GOLDENEYE, INC.
专利号	US8298840
国家	美国
文献子类	授权发明
其他题名	Dual sided processing and devices based on freestanding nitride and zinc oxide films
英文摘要	Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells.
公开日期	2012-10-30
申请日期	2011-05-06
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38552]
专题	半导体激光器专利数据库
作者单位	GOLDENEYE, INC.
推荐引用方式 GB/T 7714	ZIMMERMAN, SCOTT M.,BEESON, KARL W.,LIVESAY, WILLIAM R.. Dual sided processing and devices based on freestanding nitride and zinc oxide films. US8298840. 2012-10-30.

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