| Semiconductor layer structure with superlattice | |
| EICHLER, CHRISTOPH; LELL, ALFRED; MILER, ANDREAS; SCHILLGALIES, MARC | |
| 2011-02-22 | |
| 著作权人 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 专利号 | US7893424 |
| 国家 | 美国 |
| 文献子类 | 授权发明 |
| 其他题名 | Semiconductor layer structure with superlattice |
| 英文摘要 | The semiconductor layer structure includes a superlattice composed of stacked layers of III-V compound semiconductors of a first and at least one second type. Adjacent layers of different types in the superlattice differ in composition with respect to at least one element, at least two layers of the same type have a different content of the at least one element, the content of the at least one element is graded within a layer of the superlattice, and the layers of the superlattice contain dopants in predefined concentrations, with the superlattice comprising layers that are doped with different dopants. In this way, the electrical, optical and epitaxial properties of the superlattice can be adapted in the best possible manner to given requirements, particularly epitaxial constraints. |
| 公开日期 | 2011-02-22 |
| 申请日期 | 2007-07-20 |
| 状态 | 授权 |
| 内容类型 | 专利 |
| 源URL | [http://ir.opt.ac.cn/handle/181661/38366]  |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | OSRAM OPTO SEMICONDUCTORS GMBH |
| 推荐引用方式 GB/T 7714 | EICHLER, CHRISTOPH,LELL, ALFRED,MILER, ANDREAS,et al. Semiconductor layer structure with superlattice. US7893424. 2011-02-22. |
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