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	Planarization of GaN by photoresist technique using an inductively coupled plasma
	MOUSTAKAS, THEODORE D.; WILLIAMS, ADRIAN D.
	2012-09-04
著作权人	TRUSTEES OF BOSTON UNIVERSITY
专利号	US8257987
国家	美国
文献子类	授权发明
其他题名	Planarization of GaN by photoresist technique using an inductively coupled plasma
英文摘要	Films of III-nitride for semiconductor device growth are planarized using an etch-back method. The method includes coating a III-nitride surface having surface roughness features in the micron range with a sacrificial planarization material such as an appropriately chose photoresist. The sacrificial planarization material is then etched together with the III-nitride roughness features using dry etch methods such as inductively coupled plasma reactive ion etching. By closely matching the etch rates of the sacrificial planarization material and the III-nitride material, a planarized III-nitride surface is achieved. The etch-back process together with a high temperature annealing process yields a planarize III-nitride surface with surface roughness features reduced to the nm range. Planarized III-nitride, e.g., GaN, substrates and devices containing them are also provided.
公开日期	2012-09-04
申请日期	2007-02-02
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38337]
专题	半导体激光器专利数据库
作者单位	TRUSTEES OF BOSTON UNIVERSITY
推荐引用方式 GB/T 7714	MOUSTAKAS, THEODORE D.,WILLIAMS, ADRIAN D.. Planarization of GaN by photoresist technique using an inductively coupled plasma. US8257987. 2012-09-04.

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