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	Method for controlling the structure and surface qualities of a thin film and product produced thereby
	WONG, WILLIAM S.; KNEISSL, MICHAEL A.; TEEPE, MARK
	2009-03-10
著作权人	PALO ALTO RESEARCH CENTER INCORPORATED
专利号	US7501299
国家	美国
文献子类	授权发明
其他题名	Method for controlling the structure and surface qualities of a thin film and product produced thereby
英文摘要	A system and method for providing improved surface quality following removal of a substrate and template layers from a semiconductor structure provides an improved surface quality for a layer (such as a quantum well heterostructure active region) prior to bonding a heat sink/conductive substrate to the structure. Following the physical removal of a sapphire substrate, a sacrificial coating such as a spin-coat polymer photoresist is applied to an exposed GaN surface. This sacrificial coating provides a planar surface, generally parallel to the planes of the interfaces of the underlying layers. The sacrificial coating and etching conditions are selected such that the etch rate of the sacrificial coating approximately matches the etch rate of GaN and the underlying layers, so that the physical surface profile during etching approximates the physical surface profile of the sacrificial coating prior to etching. Following etching, a substrate is bonded to the exposed surface which acts as a heat sink and may be conductive providing for backside electrical contact to the active region.
公开日期	2009-03-10
申请日期	2006-02-17
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38288]
专题	半导体激光器专利数据库
作者单位	PALO ALTO RESEARCH CENTER INCORPORATED
推荐引用方式 GB/T 7714	WONG, WILLIAM S.,KNEISSL, MICHAEL A.,TEEPE, MARK. Method for controlling the structure and surface qualities of a thin film and product produced thereby. US7501299. 2009-03-10.

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