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	Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure
	ZHU, HONGLIANG; WANG, WEI
	2009-01-13
著作权人	INSTITUTE OF SEMICONDUCTORS CHINESE ACADEMY OF SCIENCES
专利号	US7476558
国家	美国
文献子类	授权发明
其他题名	Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure
英文摘要	This invention relates to a method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure, comprising: step 1: forming a selective growth pattern of a modulator section on a substrate; step 2: simultaneously growing a 2-stacked-layer active region structure of a modulator MQW layer and a laser MQW layer by the first epitaxy step; step 3: etching gratings, and removing the laser MQW layer in the modulator section by selective etching; and step 4: completing the growth of the entire electro-absorption modulated laser structure by a second epitaxy step.
公开日期	2009-01-13
申请日期	2005-08-30
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38267]
专题	半导体激光器专利数据库
作者单位	INSTITUTE OF SEMICONDUCTORS CHINESE ACADEMY OF SCIENCES
推荐引用方式 GB/T 7714	ZHU, HONGLIANG,WANG, WEI. Method for manufacturing selective area grown stacked-layer electro-absorption modulated laser structure. US7476558. 2009-01-13.

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