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	Optical semiconductor device and fabrication method therefor
	TOMABECHI, SHUICHI; YAMAMOTO, TSUYOSHI
	2009-10-06
著作权人	FUJITSU LIMITED
专利号	US7598106
国家	美国
文献子类	授权发明
其他题名	Optical semiconductor device and fabrication method therefor
英文摘要	An optical semiconductor device such as, for example, a quantum dot SOA and a fabrication method therefor are disclosed wherein an active layer and a current constriction structure can be formed leftwardly and rightwardly symmetrically to minimize the polarization dependency. The fabrication method for an optical semiconductor device includes the steps of forming a semiconductor layer on a semiconductor substrate, forming a groove by removing the semiconductor layer at an opening of a mask, forming a first clad layer in the form of a projection having two symmetrical inclined faces in the groove by selective growth by using the mask as a selective growth mask, forming an active layer on the two inclined faces of the first clad layer, and removing the mask and burying the active layer with a second clad layer.
公开日期	2009-10-06
申请日期	2005-04-22
状态	失效
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/38255]
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	TOMABECHI, SHUICHI,YAMAMOTO, TSUYOSHI. Optical semiconductor device and fabrication method therefor. US7598106. 2009-10-06.

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