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	Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
	CHITNIS, ASHAY; IBBETSON, JAMES
	2016-06-14
著作权人	CREE, INC.
专利号	US9368428
国家	美国
文献子类	授权发明
其他题名	Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management
英文摘要	A method for fabricating semiconductor and electronic devices at the wafer level is described. In this method, dielectric material is used to wafer bond a device wafer to a submount wafer, after which vias can be structured into the submount wafer and dielectric bonding material to access contact pads on the bonded surface of the device wafer. The vias may subsequently be filled with electrically and thermally conducting material to provide electrical contacts to the device and improve the thermal properties of the finished device, respectively. The post-bonding process described provides a method for fabricating a variety of electronic and semiconductor devices, particularly light emitting diodes with electrical contacts at the bottom of the chip.
公开日期	2016-06-14
申请日期	2007-04-03
状态	授权
内容类型	专利
源URL	[http://ir.opt.ac.cn/handle/181661/37311]
专题	半导体激光器专利数据库
作者单位	CREE, INC.
推荐引用方式 GB/T 7714	CHITNIS, ASHAY,IBBETSON, JAMES. Dielectric wafer level bonding with conductive feed-throughs for electrical connection and thermal management. US9368428. 2016-06-14.

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