Thin film and substrate-removed group III-nitride based devices and method | |
BATRES, MAX; YANG, ZHIHONG; WUNDERER, THOMAS | |
2019-04-02 | |
著作权人 | PALO ALTO RESEARCH CENTER INCORPORATED |
专利号 | US10249786 |
国家 | 美国 |
文献子类 | 授权发明 |
其他题名 | Thin film and substrate-removed group III-nitride based devices and method |
英文摘要 | A method of thinning a bulk aluminum nitride substrate includes providing a bulk aluminum nitride (AlN) substrate with at least one epitaxially grown group-III-nitride layer on a first side of the substrate, applying a slurry having a high pH to a second side of the substrate opposite the first side, chemical mechanically polishing the second side of the substrate using the slurry to remove at least a portion of the substrate, resulting in a thinned layer with a thickness less than 50 microns, and bonding the epitaxial layer to a non-native substrate. A device has at least one active zone in a layer of epitaxial Group-III-nitride material, the epitaxial Group-III-nitride layer having a defect density of less than or equal to 108/cm2. |
公开日期 | 2019-04-02 |
申请日期 | 2016-11-29 |
状态 | 授权 |
内容类型 | 专利 |
源URL | [http://ir.opt.ac.cn/handle/181661/32326] |
专题 | 半导体激光器专利数据库 |
作者单位 | PALO ALTO RESEARCH CENTER INCORPORATED |
推荐引用方式 GB/T 7714 | BATRES, MAX,YANG, ZHIHONG,WUNDERER, THOMAS. Thin film and substrate-removed group III-nitride based devices and method. US10249786. 2019-04-02. |
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