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Electronic properties of a silicon carbide nanotube under uniaxial tensile strain: a density function theory study
Chen, Hui-Lung; Ju, Shin-Pon; Lin, Jenn-Sen; Zhao, Jijun; Chen, Hsin-Tsung; Chang, Jee-Gong; Weng, Meng Hsiung; Lee, Shin-Chin; Lee, Wen-Jay
刊名JOURNAL OF NANOPARTICLE RESEARCH
2010
卷号12页码:2919-2928
关键词SiCNT DFT Electronic properties Tensile strain Modeling and simulation
ISSN号1388-0764
URL标识查看原文
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5268628
专题大连理工大学
作者单位1.Univ Taipei, Dept Chem, Taipei 111, Taiwan.,Univ Taipei, Inst Appl Chem, Taipei 111, Taiwan.
2.Natl Sun Yat Sen Univ, Dept Mech & Electromech Engn, Ctr Nanosci & Nanotechnol, Kaohsiung 80424, Taiwan.
3.Natl United Univ, Dept Mech Engn, Miaoli 36003, Taiwan.
4.Dalian Univ Technol, State Key Lab Mat Modificat Laser Electron & Ion, Sch Phys & Optoelect Technol, Dalian 116024, Peoples R China.,Dalian Univ Technol, Coll Adv Sci & Technol, Dalian 116024, Peoples R China.
5.Natl Ctr High Performance Comp, Tainan 74147, Taiwan.
推荐引用方式
GB/T 7714
Chen, Hui-Lung,Ju, Shin-Pon,Lin, Jenn-Sen,et al. Electronic properties of a silicon carbide nanotube under uniaxial tensile strain: a density function theory study[J]. JOURNAL OF NANOPARTICLE RESEARCH,2010,12:2919-2928.
APA Chen, Hui-Lung.,Ju, Shin-Pon.,Lin, Jenn-Sen.,Zhao, Jijun.,Chen, Hsin-Tsung.,...&Lee, Wen-Jay.(2010).Electronic properties of a silicon carbide nanotube under uniaxial tensile strain: a density function theory study.JOURNAL OF NANOPARTICLE RESEARCH,12,2919-2928.
MLA Chen, Hui-Lung,et al."Electronic properties of a silicon carbide nanotube under uniaxial tensile strain: a density function theory study".JOURNAL OF NANOPARTICLE RESEARCH 12(2010):2919-2928.
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