Landau level states on a topological insulator thin film

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	Landau level states on a topological insulator thin film
	Yang Zhihua; Han Jung Hoon
刊名	PHYSICAL REVIEW B
	2011
卷号	83 期号:4
ISSN号	1098-0121
通讯作者	Yang, ZH
英文摘要	We analyze the four-dimensional Hamiltonian proposed to describe the band structure of the single-Dirac-cone family of topological insulators in the presence of a uniform perpendicular magnetic field. Surface Landau level (LL) states appear, decoupled from the bulk levels and following the quantized energy dispersion of a purely two-dimensional surface Dirac Hamiltonian. A small hybridization gap splits the degeneracy of the central n = 0 LL, with dependence on the film thickness and the field strength that can be obtained analytically. Explicit calculations of the spin and charge densities show that surface LL states are localized within approximately one quintuple layer from the surface termination. Some new surface-bound LLs are shown to exist at a higher Landau level index.
学科主题	Physics
收录类别	SCI
WOS记录号	WOS:000286772900004
公开日期	2012-11-29
内容类型	期刊论文
源URL	[http://ir.xjipc.cas.cn/handle/365002/1674]
专题	新疆理化技术研究所_材料物理与化学研究室
作者单位	Sungkyunkwan Univ, Dept Phys, Suwon 440746, South Korea;Sungkyunkwan Univ, Phys Res Div BK21, Suwon 440746, South Korea;Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China
推荐引用方式 GB/T 7714	Yang Zhihua,Han Jung Hoon. Landau level states on a topological insulator thin film[J]. PHYSICAL REVIEW B,2011,83(4).
APA	Yang Zhihua,&Han Jung Hoon.(2011).Landau level states on a topological insulator thin film.PHYSICAL REVIEW B,83(4).
MLA	Yang Zhihua,et al."Landau level states on a topological insulator thin film".PHYSICAL REVIEW B 83.4(2011).