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	Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction
	Cao, Haining[1]; Zhang, Zhiya[2]; Si, Mingsu[3]; Zhang, Feng[4]; Wang, Yuhua[5]
	2014
会议名称	INTERNATIONAL CONFERENCE MACHINERY, ELECTRONICS AND CONTROL SIMULATION
会议日期	2014-01-01
关键词	Indirect-direct band gap transition MoS2/WS2 heterojunction Van der Waals interaction engineering First principles calculations
页码	70-74
收录类别	EI ; CPCI-S
URL标识	查看原文
WOS记录号	WOS:000352789800016
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/5232755
专题	河南大学
作者单位	1.[1]Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China. 2.Korea Inst Sci & Technol, Ctr Computat Sci, Seoul 136791, South Korea.,Korean Univ Sci & Technol, Nanomat Sci & Engn, Taejon 305350, South Korea. 3.[2]Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China. 4.[3]Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China. 5.[4]Henan Univ, Sch Phys & Elect, Key Lab Photovolta Mat Henan Prov, Kaifeng 475001, Peoples R China. 6.[5]Lanzhou Univ, Minist Educ, Key Lab Magnetism & Magnet Mat, Lanzhou 730000, Peoples R China.
推荐引用方式 GB/T 7714	Cao, Haining[1],Zhang, Zhiya[2],Si, Mingsu[3],et al. Indirect-direct band gap transition by van der Waals interaction engineering in MoS2/WS2 bilayer heterojunction[C]. 见:INTERNATIONAL CONFERENCE MACHINERY, ELECTRONICS AND CONTROL SIMULATION. 2014-01-01.

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