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High-performance indium oxide thin film transistor with ITO source/drain electrodes fabricated by reactive sputtering
Zhang, Xin'an[1]; Yu, Xiankun[2]; Zhai, Junxia[3]; Jiao, Yang[4]; Ding, Linghong[5]; Zhang, Weifeng[6]
2014
会议名称MATERIAL SCIENCE AND ADVANCED TECHNOLOGIES IN MANUFACTURING
会议日期2014-01-01
关键词Reactive sputtering In2O3 films Thin film transistor Mobility
页码319-323
收录类别EI ; CPCI-S
URL标识查看原文
WOS记录号WOS:000336633800064
内容类型会议论文
URI标识http://www.corc.org.cn/handle/1471x/5232719
专题河南大学
作者单位1.[1]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China.
2.[2]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China.
3.[3]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China.
4.[4]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China.
5.[5]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China.
6.[6]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China.
推荐引用方式
GB/T 7714
Zhang, Xin'an[1],Yu, Xiankun[2],Zhai, Junxia[3],et al. High-performance indium oxide thin film transistor with ITO source/drain electrodes fabricated by reactive sputtering[C]. 见:MATERIAL SCIENCE AND ADVANCED TECHNOLOGIES IN MANUFACTURING. 2014-01-01.
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