High-performance indium oxide thin film transistor with ITO source/drain electrodes fabricated by reactive sputtering | |
Zhang, Xin'an[1]; Yu, Xiankun[2]; Zhai, Junxia[3]; Jiao, Yang[4]; Ding, Linghong[5]; Zhang, Weifeng[6] | |
2014 | |
会议名称 | MATERIAL SCIENCE AND ADVANCED TECHNOLOGIES IN MANUFACTURING |
会议日期 | 2014-01-01 |
关键词 | Reactive sputtering In2O3 films Thin film transistor Mobility |
页码 | 319-323 |
收录类别 | EI ; CPCI-S |
URL标识 | 查看原文 |
WOS记录号 | WOS:000336633800064 |
内容类型 | 会议论文 |
URI标识 | http://www.corc.org.cn/handle/1471x/5232719 |
专题 | 河南大学 |
作者单位 | 1.[1]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 2.[2]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 3.[3]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 4.[4]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 5.[5]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. 6.[6]Henan Univ, Inst Microsyst, Sch Phys & Elect, Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China. |
推荐引用方式 GB/T 7714 | Zhang, Xin'an[1],Yu, Xiankun[2],Zhai, Junxia[3],et al. High-performance indium oxide thin film transistor with ITO source/drain electrodes fabricated by reactive sputtering[C]. 见:MATERIAL SCIENCE AND ADVANCED TECHNOLOGIES IN MANUFACTURING. 2014-01-01. |
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