CORC  > 河南大学
Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon
Wang, Ke-Fan[1]; Shao, Hezhu[2]; Liu, Kong[3]; Qu, Shengchun[4]; Wang, Yuanxu[5]; Wang, Zhanguo[6]
刊名APPLIED PHYSICS LETTERS
2015
卷号107期号:11
ISSN号0003-6951
DOIhttp://dx.doi.org/10.1063/1.4931091
URL标识查看原文
收录类别SCI(E) ; EI
WOS记录号WOS:000361639200026
内容类型期刊论文
URI标识http://www.corc.org.cn/handle/1471x/5216243
专题河南大学
作者单位[1]Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, China |Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China [2]Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, China[3]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China [4]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China [5]Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng, China [6]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China
推荐引用方式
GB/T 7714
Wang, Ke-Fan[1],Shao, Hezhu[2],Liu, Kong[3],et al. Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon[J]. APPLIED PHYSICS LETTERS,2015,107(11).
APA Wang, Ke-Fan[1],Shao, Hezhu[2],Liu, Kong[3],Qu, Shengchun[4],Wang, Yuanxu[5],&Wang, Zhanguo[6].(2015).Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon.APPLIED PHYSICS LETTERS,107(11).
MLA Wang, Ke-Fan[1],et al."Possible atomic structures responsible for the sub-bandgap absorption of chalcogen-hyperdoped silicon".APPLIED PHYSICS LETTERS 107.11(2015).
个性服务
查看访问统计
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。


©版权所有 ©2017 CSpace - Powered by CSpace