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	Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature
	Qin Xi-Feng; Li Hong-Zhen; Li Shuang; Ji Zi-Wu; Wang Hui-Ning; Wang Feng-Xiang; Fu Gang
刊名	CHINESE PHYSICS B
	2012
卷号	21期号:6
关键词	Er ion implantation silicon-on-insulator annealing behavior Rutherford backscattering technique
DOI	10.1088/1674-1056/21/6/066105
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5201628
专题	山东大学
作者单位	1.Shandong Jianzhu Univ, Coll Sci, Jinan 250101, Peoples R China. 2.Qufu Normal Univ,
推荐引用方式 GB/T 7714	Qin Xi-Feng,Li Hong-Zhen,Li Shuang,et al. Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature[J]. CHINESE PHYSICS B,2012,21(6).
APA	Qin Xi-Feng.,Li Hong-Zhen.,Li Shuang.,Ji Zi-Wu.,Wang Hui-Ning.,...&Fu Gang.(2012).Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature.CHINESE PHYSICS B,21(6).
MLA	Qin Xi-Feng,et al."Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature".CHINESE PHYSICS B 21.6(2012).

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