Control of structure, conduction behavior, and band gap of Zn1-xMgxO films by nitrogen partial pressure ratio of sputtering gases

	Control of structure, conduction behavior, and band gap of Zn1-xMgxO films by nitrogen partial pressure ratio of sputtering gases
	Cong C. X. ; Yao B. ; Xing G. Z. ; Xie Y. P. ; Guan L. X. ; Li B. H. ; Wang X. H. ; Wei Z. P. ; Zhang Z. Z. ; Lv Y. M. ; Shen D. Z. ; Fan X. W.
刊名	Applied Physics Letters
	2006
卷号	89 期号:26
ISSN号	0003-6951
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI ; EI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/26669]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Cong C. X.,Yao B.,Xing G. Z.,et al. Control of structure, conduction behavior, and band gap of Zn1-xMgxO films by nitrogen partial pressure ratio of sputtering gases[J]. Applied Physics Letters,2006,89(26).
APA	Cong C. X..,Yao B..,Xing G. Z..,Xie Y. P..,Guan L. X..,...&Fan X. W..(2006).Control of structure, conduction behavior, and band gap of Zn1-xMgxO films by nitrogen partial pressure ratio of sputtering gases.Applied Physics Letters,89(26).
MLA	Cong C. X.,et al."Control of structure, conduction behavior, and band gap of Zn1-xMgxO films by nitrogen partial pressure ratio of sputtering gases".Applied Physics Letters 89.26(2006).