Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD

	Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD
	Ning Y. Q. ; Zhou T. M. ; Zhang B. L. ; Jiang H. ; Li S. W. ; Yuan G. A. ; Tian Y. A. ; Jin Y. X.
刊名	Journal of Materials Science-Materials in Electronics
	1998
卷号	9 期号:2 页码:121-125
ISSN号	0957-4522
其他题名	论文其他题名
合作状况	合作性质
收录类别	SCI
语种	英语
公开日期	2012-10-21
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/25355]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Ning Y. Q.,Zhou T. M.,Zhang B. L.,et al. Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD[J]. Journal of Materials Science-Materials in Electronics,1998,9(2):121-125.
APA	Ning Y. Q..,Zhou T. M..,Zhang B. L..,Jiang H..,Li S. W..,...&Jin Y. X..(1998).Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD.Journal of Materials Science-Materials in Electronics,9(2),121-125.
MLA	Ning Y. Q.,et al."Growth of GaSb-rich and InAs-rich GaInAsSb alloys on GaSb substrates by MOCVD".Journal of Materials Science-Materials in Electronics 9.2(1998):121-125.