Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity
Li K(李凯); Hu WR(胡文瑞)
刊名Crystal Growth & Design
2003
卷号3期号:1页码:73-78
ISSN号1528-7483
通讯作者Li, K (reprint author), Washington State Univ, Sch Mech & Mat Engn, Pullman, WA 99164 USA.
中文摘要A two-dimensional axisymmetric numerical model is presented to study the influence of local magnetic fields on P-doped Si floating zone melting crystal growth in microgravity. The model is developed based on the finite difference method in a boundary-fitted curvilinear coordinate system. Extensive numerical simulations are carried out, and parameters studied include the curved growth interface shape and the magnetic field configurations. Computed results show that the local magnetic field is more effective in reducing the impurity concentration nonuniformity at the growth interface in comparison with the longitudinal magnetic field. Moreover, the curved growth interface causes more serious impurity concentration nonuniformity at the growth interface than the case with a planar growth interface.
学科主题力学
类目[WOS]Chemistry, Multidisciplinary ; Crystallography ; Materials Science, Multidisciplinary
研究领域[WOS]Chemistry ; Crystallography ; Materials Science
关键词[WOS]INTERFACE SHAPES ; HEAT-TRANSFER ; FLUID-FLOW ; SEGREGATION ; CONVECTION ; DESIGN
收录类别SCI
语种英语
WOS记录号WOS:000180259200011
公开日期2007-06-15 ; 2007-12-05 ; 2009-06-23
内容类型期刊论文
源URL[http://dspace.imech.ac.cn/handle/311007/15811]  
专题力学研究所_力学所知识产出(1956-2008)
推荐引用方式
GB/T 7714
Li K,Hu WR. Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity[J]. Crystal Growth & Design,2003,3(1):73-78.
APA 李凯,&胡文瑞.(2003).Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity.Crystal Growth & Design,3(1),73-78.
MLA 李凯,et al."Influence of Local Magnetic Fields on P-Doped Si Floating Zone Melting Crystal Growth in Microgravity".Crystal Growth & Design 3.1(2003):73-78.
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