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	Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing
	Lin, T.; Chen, R.G.; Zhang, H.Q.; Li, C.; Ma, X.J.
	2013
卷号	16页码:738-741
关键词	Laser diode Quantum well intermixing Metalorganic vapor phase epitaxy Semiconducting III-V materials
ISSN号	1369-8001
DOI	10.1016/j.mssp.2012.12.017
URL标识	查看原文
WOS记录号	WOS:000319641500025
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/5013308
专题	西安理工大学
推荐引用方式 GB/T 7714	Lin, T.,Chen, R.G.,Zhang, H.Q.,et al. Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing[J],2013,16:738-741.
APA	Lin, T.,Chen, R.G.,Zhang, H.Q.,Li, C.,&Ma, X.J..(2013).Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing.,16,738-741.
MLA	Lin, T.,et al."Theoretical analysis of the inter-diffusion coefficients in the AlGaInP material quantum well intermixing".16(2013):738-741.

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