| Epitaxial growth of Si/SiC heterostructures with different preferred orientations on 6H-SiC(0001) by LPCVD | |
| Li, L. B.; Chen, Z. M.; Zang, Y.; Song, L. X.; Han, Y. L.; Chu, Q. | |
| 2016 | |
| 卷号 | 18页码:5681-5685 |
| ISSN号 | 1466-8033 |
| DOI | 10.1039/c6ce00137h |
| URL标识 | 查看原文 |
| WOS记录号 | WOS:000381417700011 |
| 内容类型 | 期刊论文 |
| URI标识 | http://www.corc.org.cn/handle/1471x/4982290 |
| 专题 | 西安理工大学 |
| 推荐引用方式 GB/T 7714 | Li, L. B.,Chen, Z. M.,Zang, Y.,et al. Epitaxial growth of Si/SiC heterostructures with different preferred orientations on 6H-SiC(0001) by LPCVD[J],2016,18:5681-5685. |
| APA | Li, L. B.,Chen, Z. M.,Zang, Y.,Song, L. X.,Han, Y. L.,&Chu, Q..(2016).Epitaxial growth of Si/SiC heterostructures with different preferred orientations on 6H-SiC(0001) by LPCVD.,18,5681-5685. |
| MLA | Li, L. B.,et al."Epitaxial growth of Si/SiC heterostructures with different preferred orientations on 6H-SiC(0001) by LPCVD".18(2016):5681-5685. |
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