QQ客服 官方微博 反馈留言

	Investigation on the materials of heavily Mg-doped AlInP layers for laser diode structure
	Lin, Tao; Li, Jingjing; Zhang, Tianjie; Lin, Nan; Xiong, Cong; Ma, Xiaoyu
	2018
卷号	742页码:790-796
关键词	MOCVD Mg doping AlInP Laser diode
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2018.01.221
URL标识	查看原文
WOS记录号	WOS:000427505800094
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4976399
专题	西安理工大学
推荐引用方式 GB/T 7714	Lin, Tao,Li, Jingjing,Zhang, Tianjie,et al. Investigation on the materials of heavily Mg-doped AlInP layers for laser diode structure[J],2018,742:790-796.
APA	Lin, Tao,Li, Jingjing,Zhang, Tianjie,Lin, Nan,Xiong, Cong,&Ma, Xiaoyu.(2018).Investigation on the materials of heavily Mg-doped AlInP layers for laser diode structure.,742,790-796.
MLA	Lin, Tao,et al."Investigation on the materials of heavily Mg-doped AlInP layers for laser diode structure".742(2018):790-796.

个性服务

查看访问统计

相关权益政策

暂无数据

收藏/分享

除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。