The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon

CORC > 西安光学精密机械研究所 > 中国科学院西安光学精密机械研究所 > 瞬态光学技术国家重点实验室

	The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon
	Yang, J. J.1; Liu, B.1; Liao, X. D.1; Jiao, G. H.2; Xu, K. W.3
刊名	rare metal materials and engineering
	2012-02-01
卷号	41 期号:s1 页码:120-123
关键词	Zr-Ge-N films diffusion barrier micro-structural thermal stability
ISSN号	1002-185x
产权排序	2
合作状况	国内
英文摘要	the main purpose of the present micro-structural analysis by transmission electron microscopy (tem) and x-ray diffraction (xrd) was to investigate whether amorphous zr-ge-n films are a potential candidate as a diffusion barrier for cu wiring used in si devices. the zr-ge-n films were prepared by a radio frequency (rf) reactive magnetron sputter-deposition technique using n-2 and ar mixed gas, and the film structure was found to be sensitive to the gas flow ratio of n-2 vs. ar during sputtering. polycrystalline zr-ge-n films were obtained when the n-2/(ar+n-2) ratio was smaller than 0.2 and amorphous-like zr-ge-n films were obtained when the ratio was larger than 0.3. diffusion barrier test was performed by annealing the cu/zr-ge-n/si film stack under ar atmosphere. the deposited zr-ge-n(c) films remained amorphous even after high temperature annealing. the cu diffusion profile in the film was assessed by the auger electron spectroscopy (aes). the results indicate that cu diffusion was minimal in amorphous zr-ge-n(c) films even at high annealing temperatures of 800 degrees c.
学科主题	materials science ; multidisciplinary ; metallurgy & metallurgical engineering
WOS标题词	science & technology ; technology
类目[WOS]	materials science, multidisciplinary ; metallurgy & metallurgical engineering
研究领域[WOS]	materials science ; metallurgy & metallurgical engineering
关键词[WOS]	si ; metallization ; interconnects ; behavior
收录类别	SCI
语种	英语
WOS记录号	WOS:000303635900028
公开日期	2012-09-07
内容类型	期刊论文
源URL	[http://ir.opt.ac.cn/handle/181661/20383]
专题	西安光学精密机械研究所_瞬态光学技术国家重点实验室
作者单位	1.Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China 2.CAS, Xian Inst Opt & Precis Mech, State Key Lab Transient Opt & Photon, Xian 710049, Peoples R China 3.Xi An Jiao Tong Univ, State Key Lab Mech Behav Mat, Xian 710049, Peoples R China
推荐引用方式 GB/T 7714	Yang, J. J.,Liu, B.,Liao, X. D.,et al. The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon[J]. rare metal materials and engineering,2012,41(s1):120-123.
APA	Yang, J. J.,Liu, B.,Liao, X. D.,Jiao, G. H.,&Xu, K. W..(2012).The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon.rare metal materials and engineering,41(s1),120-123.
MLA	Yang, J. J.,et al."The Characterization of Sputtered Zr-Ge-N Thin Films as Diffusion Barriers Between Copper and Silicon".rare metal materials and engineering 41.s1(2012):120-123.