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	Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes
	Lv YJ(吕元杰); Feng ZH(冯志红); Gu GD(顾国栋); Dun SB(敦少博); Yin JY(尹甲运); Wang YG(王元刚); Xu P(徐鹏); Han TT(韩婷婷); Song XB(宋旭波); Cai SJ(蔡树军)
刊名	Chinese Physics B
	2014
期号	02页码:430-434
关键词	Al(Ga)N/GaN strain relative permittivity Schottky metal
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4800190
专题	山东大学
作者单位	National Key Laboratory of Application Specific Integrated Circuit,
推荐引用方式 GB/T 7714	Lv YJ,Feng ZH,Gu GD,et al. Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes[J]. Chinese Physics B,2014(02):430-434.
APA	Lv YJ.,Feng ZH.,Gu GD.,Dun SB.,Yin JY.,...&Lin ZJ.(2014).Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes.Chinese Physics B(02),430-434.
MLA	Lv YJ,et al."Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes".Chinese Physics B .02(2014):430-434.

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