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	Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor
	Lv YJ(吕元杰); Feng ZH(冯志红); Gu GD(顾国栋); Yin JY(尹甲运); Fang YL(房玉龙); Wang YG(王元刚); Tan X(谭鑫); Zhou XY(周幸叶); Lin ZJ(林兆军); Ji ZW(冀子武)
刊名	Chinese Physics B
	2015
期号	08页码:534-538
关键词	AlGaN/AlN/GaN barrier layer thickness electron mobility polarization Coulomb field scattering
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4787891
专题	山东大学
作者单位	National Key Laboratory of Application Specific Integrated Circuit ,
推荐引用方式 GB/T 7714	Lv YJ,Feng ZH,Gu GD,et al. Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor[J]. Chinese Physics B,2015(08):534-538.
APA	Lv YJ.,Feng ZH.,Gu GD.,Yin JY.,Fang YL.,...&Cai SJ.(2015).Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor.Chinese Physics B(08),534-538.
MLA	Lv YJ,et al."Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/GaN heterostructure field-effect transistor".Chinese Physics B .08(2015):534-538.

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