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	All-sputtered, flexible, bottom-gate IGZO/Al2O3bi-layer thin film transistors on PEN fabricated by a fully room temperature process
	Zheng, Zeke[1]; Zeng, Yong[1]; Yao, Rihui[1]; Fang, Zhiqiang[1]; Zhang, Hongke[1]; Hu, Shiben[1]; Li, Xiaoqing[1]; Ning, Honglong[1]; Peng, Junbiao[1]; Xie, Weiguang[2]
	2017
卷号	5期号:28页码:7043
URL标识	查看原文
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4763935
专题	暨南大学
作者单位	1.[1] Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, China 2.[2] Siyuan Laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, China 3.[3] Institute for Advanced Materials, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University, Guangzhou, 510006, China
推荐引用方式 GB/T 7714	Zheng, Zeke[1],Zeng, Yong[1],Yao, Rihui[1],et al. All-sputtered, flexible, bottom-gate IGZO/Al2O3bi-layer thin film transistors on PEN fabricated by a fully room temperature process[J],2017,5(28):7043.
APA	Zheng, Zeke[1].,Zeng, Yong[1].,Yao, Rihui[1].,Fang, Zhiqiang[1].,Zhang, Hongke[1].,...&Lu, Xubing[3].(2017).All-sputtered, flexible, bottom-gate IGZO/Al2O3bi-layer thin film transistors on PEN fabricated by a fully room temperature process.,5(28),7043.
MLA	Zheng, Zeke[1],et al."All-sputtered, flexible, bottom-gate IGZO/Al2O3bi-layer thin film transistors on PEN fabricated by a fully room temperature process".5.28(2017):7043.

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