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	1D ZnSSe-ZnSe Axial Heterostructure and its Application for Photodetectors
	Mu, ZM; Zheng, Q; Liu, RP; Malik, MWI; Tang, DS; Zhou, WC; Wan, Q
刊名	ADVANCED ELECTRONIC MATERIALS
	2019
卷号	Vol.5 No.4
ISSN号	2199-160X
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4751470
专题	湖南大学
作者单位	1.Hunan Univ, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China 2.Hunan Normal Univ, Sch Phys & Elect, Key Lab Low Dimens Quantum Struct & Quantum Contr, Synerget Innovat Ctr Quantum Effects & Applicat,M, Changsha 410081, Hunan, Peoples R China 3.Beijing Inst Graph Commun, Beijing 102600, Peoples R China
推荐引用方式 GB/T 7714	Mu, ZM,Zheng, Q,Liu, RP,et al. 1D ZnSSe-ZnSe Axial Heterostructure and its Application for Photodetectors[J]. ADVANCED ELECTRONIC MATERIALS,2019,Vol.5 No.4.
APA	Mu, ZM.,Zheng, Q.,Liu, RP.,Malik, MWI.,Tang, DS.,...&Wan, Q.(2019).1D ZnSSe-ZnSe Axial Heterostructure and its Application for Photodetectors.ADVANCED ELECTRONIC MATERIALS,Vol.5 No.4.
MLA	Mu, ZM,et al."1D ZnSSe-ZnSe Axial Heterostructure and its Application for Photodetectors".ADVANCED ELECTRONIC MATERIALS Vol.5 No.4(2019).

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