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	Van der Waals epitaxial growth of vertically stacked Sb2Te3 /MoS2 p-n heterojunctions for high performance optoelectronics
	Liu, HW; Li, D; Ma, C; Zhang, XH; Sun, XX; Zhu, CG; Zheng, BY; Zou, ZX; Luo, ZY; Zhu, XL
刊名	NANO ENERGY
	2019
卷号	Vol.59页码:66-74
ISSN号	2211-2855
URL标识	查看原文
公开日期	[db:dc_date_available]
内容类型	期刊论文
URI标识	http://www.corc.org.cn/handle/1471x/4751325
专题	湖南大学
作者单位	1.Hunan Univ, Key Lab Micronano Phys & Technol Hunan Prov, State Key Lab Chemo Biosensing & Chemometr, Sch Phys & Elect, Changsha 410082, Hunan, Peoples R China 2.Hunan Univ, Coll Mat Sci & Engn, Changsha 410082, Hunan, Peoples R China
推荐引用方式 GB/T 7714	Liu, HW,Li, D,Ma, C,et al. Van der Waals epitaxial growth of vertically stacked Sb2Te3 /MoS2 p-n heterojunctions for high performance optoelectronics[J]. NANO ENERGY,2019,Vol.59:66-74.
APA	Liu, HW.,Li, D.,Ma, C.,Zhang, XH.,Sun, XX.,...&Zhu, XL.(2019).Van der Waals epitaxial growth of vertically stacked Sb2Te3 /MoS2 p-n heterojunctions for high performance optoelectronics.NANO ENERGY,Vol.59,66-74.
MLA	Liu, HW,et al."Van der Waals epitaxial growth of vertically stacked Sb2Te3 /MoS2 p-n heterojunctions for high performance optoelectronics".NANO ENERGY Vol.59(2019):66-74.

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